SUP85N10-10_06 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 °C MOSFET

SUP/SUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS
2.5
V_GS = 10 V
I_D = 30 A
2.0
T_A = 25 °C, unless otherwise noted
100
1.5
T_J = 150 °C
T_J = 25 °C
10
1.0
0.5
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
1
0
0.3
0.6
0.9
1.2
VSD^{− Source-to-Drain Voltage (V)}
Source-Drain Diode Forward Voltage
140
100
I_AV (A) at T _A = 25 °C
10
I_AV (A) at T _A = 150 °C
1
130
I_D = 250 µA
120
110
100
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Avalanche Current vs. Time
90
- 50 - 25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (°C)
T_J - Drain-Source Breakdown
vs. Junction-Temperature
www.vishay.com
4
Document Number: 71141
S-61008–Rev. D, 12-Jun-06