SUP57N20-33_08 Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 °C MOSFET

THERMAL RATINGS
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
T_C - Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
SUP57N20-33
Vishay Siliconix
1000
100
10
1
0.1
0.1
Limited
by r_DS(on)
T_C = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms, 100 ms
DC
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
1000
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72100.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
www.vishay.com
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