SUP57N20-33_08 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 °C MOSFET

SUP57N20-33
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V_(BR)DSS
V_DS = 0 V, I_D = 250 µA
200
Gate-Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
2
V
4
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
V_DS = 160 V, V_GS = 0 V
1
Zero Gate Voltage Drain Current
I_DSS
V_DS = 160 V, V_GS = 0 V, T_J = 125 °C
50
µA
V_DS = 160 V, V_GS = 0 V, T_J = 175 °C
250
On-State Drain Current^a
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
120
A
V_GS = 10 V, I_D = 30 A
0.027
0.033
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = 10 V, I_D = 30 A, T_J = 125 °C
0.069
Ω
V_GS = 10 V, I_D = 30 A, T_J = 175 °C
0.093
Forward Transconductance^a
g_fs
V_DS = 15 V, I_D = 30 A
25
S
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Q_g
Gate-Source Charge^c
Q_gs
V_DS = 100 V, V_GS = 10 V, I_D = 85 A
Gate-Drain Charge^c
Q_gd
Turn-On Delay Time^c
t_d(on)
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = 100 V, R_L = 1.5 Ω
I_D ≅ 65 A, V_GEN = 10 V, R_G = 2.5 Ω
Fall Time^c
t_f
Source-Drain Diode Ratings and Characteristics (T_C = 25 °C)^b
Continuous Current
I_S
Pulsed Current
I_SM
Forward Voltage^a
V_SD
I_F = 65 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Current
I_RM(REC)
I_F = 50 A, di/dt = 100 A/µs
Reverse Recovery Charge
Q_rr
5100
480
pF
210
90
130
23
nC
34
24
35
220
330
ns
45
70
200
300
65
A
140
1.0
1.5
V
130
200
ns
8
12
A
0.52
1.2
µC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72100
S-71662-Rev. B, 06-Aug-07