SUP57N20-33_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 °C MOSFET

SUP57N20-33
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
140
140
V_GS = 10 thru 7 V
6V
120
120
100
100
80
80
60
60
40
5V
20
4V
0
0
2
4
6
8
10
40
20
0
0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
180
0.060
T_C = - 55 °C
150
25 °C
0.045
120
125 °C
90
0.030
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
7
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V_GS = 10 V
60
0.015
30
0
0
7000
6000
5000
4000
3000
2000
1000
0
0
20
40
60
80
100 120
I_D - Drain Current (A)
Transconductance
C_iss
C_rss
C_oss
25
50
75
100 125 150
V_DS - Drain-to-Source Voltage (V)
Capacitance
0.000
0
20
20
40
60
80
100 120
I_D - Drain Current (A)
On-Resistance vs. Drain Current
16
V_DS = 100 V
I_D = 65 A
12
8
4
0
0
25
50
75
100 125 150
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
www.vishay.com
3