SUP57N20-33_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 °C MOSFET

SUP57N20-33
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
100
V_GS = 10 V
2.5
I_D = 30 A
2.0
T_J = 150 °C
T_J = 25 °C
1.5
10
1.0
0.5
0.0
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
100
I_AV (A) at T_A = 25 °C
10
1
I_AV (A) at T_A = 150 °C
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Avalanche Current vs. Time
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
240
230
I_D = 1.0 mA
220
210
200
190
180
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown
vs. Junction Temperature
www.vishay.com
4
Document Number: 72100
S-71662-Rev. B, 06-Aug-07