SUP57N20-33_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 °C MOSFET

SUP57N20-33
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
200
0.033 at V_GS = 10 V
I_D (A)
57
TO-220AB
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
APPLICATIONS
• Isolated DC/DC converters
- Primary-Side Switch
D
Available
RoHS*
COMPLIANT
DRAIN connected to TAB
GD S
Top View
Ordering Information: SUP57N20-33
SUP57N20-33-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
I_AS
Single Pulse Avalanche Energy^a
L = 0.1 mH
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72100
S-71662-Rev. B, 06-Aug-07
Symbol
R_thJA
R_thJC
Limit
200
± 20
57
33
140
35
61
300^b
3.75
- 55 to 175
Limit
40
0.5
Unit
V
A
mJ
W
°C
Unit
°C/W
www.vishay.com
1