SUP50N10-21P Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
T_J = 150 °C
10
T_J = 25 °C
100
Limited by R_DS(on)*
10
1
SUP50N10-21P
Vishay Siliconix
100 μs
1 ms
10 ms
DC, 10 s,
1 s, 100 ms
1
10^-6
10^-5
0.0001 0.001
0.01
0.1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
0.1
T_C = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.05
0.02
Single Pulse
0.1
10^-4
10^-3
10^-2
10^-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62781.
Document Number: 62781
For technical questions, contact:: [e-mail]
www.vishay.com
S12-2730-Rev. A, 12-Nov-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000