SUP50N10-21P Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP50N10-21P
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.021 at V_GS = 10 V
100
0.023 at V_GS = 8 V
0.028 at V_GS = 6 V
TO-220AB
I_D (A)
50^d
49.7
45
Q_g (Typ.)
30.2 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/AC Inverters
• Primary Side Switching
• Synchronous Rectification
D
GDS
Top View
Ordering Information:
SUP50N10-21P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
I_D
Pulsed Drain Current (t = 300 µs)
I_DM
Avalanche Current
I_AS
Single Avalanche Energy^a
L = 0.1 mH
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Symbol
R_thJA
R_thJC
Limit
100
± 20
50^d
41.6
60
40
80
125^b
3.1
- 55 to 150
Limit
40
1
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 62781
For technical questions, contact:: [e-mail]
www.vishay.com
S12-2730-Rev. A, 12-Nov-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000