SUP50N10-21P Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP50N10-21P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
V_GS = 10 V thru 7 V
45
V_GS = 6 V
30
0.028
0.025
0.022
V_GS = 6 V
0.019
V_GS = 8 V
15
V_GS = 5 V
0
0
1
2
3
4
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.016
V_GS = 10 V
0.013
0
15
30
45
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2
0.05
I_D =10 A
1.5
1
T_C = 25 °C
0.04
0.03
T_J = 125 °C
0.5
0
0
75
60
45
30
15
0
0
T_C = 125 °C
T_C = - 55 °C
1.5
3
4.5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
T_C = - 55 °C
T_C = 25 °C
T_C = 125 °C
6
12
18
24
30
I_D - Drain Current (A)
Transconductance
0.02
T_J = 25 °C
0.01
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
I_D = 10 A
8
V_DS = 50 V
V_DS = 25 V
6
V_DS = 80 V
4
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 62781
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S12-2730-Rev. A, 12-Nov-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000