SUP50N10-21P Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP50N10-21P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
3.8
T_J = 150 °C
3.4
10
3
I_D = 250 μA
2.6
1
T_J = 25 °C
2.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
3000
2400
C_iss
1800
1200
600
C_oss
0 ^Crss
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
I_D = 10 A
1.75
V_GS = 10 V
V_GS = 8 V
1.3
125
I_D = 250 μA
120
115
110
105
100
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
60
45
30
0.85
15
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
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Document Number: 62781
4
S12-2730-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000