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SUP50N10-21P Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET
SUP50N10-21P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2
V
4
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 250
nA
VDS = 100 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
µA
VDS = 100 V, VGS = 0 V, TJ = 150 °C
250
On-State Drain Currenta
ID(on)
VDS 10 V, VGS = 10 V
20
A
VGS = 10 V, ID = 10 A
0.017
0.021
Drain-Source On-State Resistancea
RDS(on)
VGS = 8 V, ID = 9.6 A
0.019
0.023

VGS = 6 V, ID = 8.7 A
0.022
0.028
Forward Transconductancea
gfs
VDS = 20 V, ID = 10 A
40
S
Dynamicb
Input Capacitance
Ciss
2055
Output Capacitance
Coss
VGS = 0 V, VDS = 50 V, f = 1 MHz
227
pF
Reverse Transfer Capacitance
Crss
120
Total Gate Chargec
Qg
45
68
Gate-Source Chargec
Qgs
VDS = 50 V, VGS = 10 V, ID = 10 A
10.5
nC
Gate-Drain Chargec
Qgd
15.9
Gate Resistance
Rg
f = 1 MHz
0.3
1.5
3

Turn-On Delay Timec
td(on)
10
20
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 20 V, RL = 2 
ID  8 A, VGEN = 10 V, Rg = 1 
10
20
ns
22
33
Fall Timec
tf
7
14
Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C)b
Continuous Current
IS
Pulsed Current
ISM
50
A
60
Forward Voltagea
VSD
IF = 8 A, VGS = 0 V
0.75
1.2
V
Reverse Recovery Time
trr
55
83
ns
Peak Reverse Recovery Current
IRM(REC)
IF = 8 A, dI/dt = 100 A/µs
4.1
6.2
A
Reverse Recovery Charge
Qrr
107
161
nC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 62781
2
S12-2730-Rev. A, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000