SUP40N10-30-GE3 Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

THERMAL RATINGS
50
40
30
20
10
0
- 50 - 25
0
25
50
75
150
T_C - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
SUP40N10-30-GE3
Vishay Siliconix
100
Limited by R_DS(on)*
10 μs
100 μs
10
1 ms
1
T_A = 25 °C
Single Pulse
10 ms
100 ms,
DC
BVDSS Limited
0.1
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66702.
Document Number: 66702
S10-1049-Rev. A, 03-May-10
www.vishay.com
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