SUP40N10-30-GE3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP40N10-30-GE3
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) (Ω)
0.030 at V_GS = 10 V
0.034 at V_GS = 6 V
I_D (A)
38.5
36
TO-220AB
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
D
G
GD S
Top View
Ordering Information: SUP40N10-30-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_A = 25 °C^c
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
Limit
100
± 20
38.5
17
75
35
61
89^b
3.1
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mount^c
Free Air
Symbol
R_thJA
R_thJC
Limit
40
62.5
1.4
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 66702
S10-1049-Rev. A, 03-May-10
www.vishay.com
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