SUP40N10-30-GE3 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
75
75
V_GS = 10 V thru 6 V
60
60
45
5V
45
30
30
15
4V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
100
T_C = - 55 °C
80
25 °C
60
125 °C
40
20
15
0
0
0.08
0.06
0.04
0.02
SUP40N10-30-GE3
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V_GS = 6 V
V_GS = 10 V
0
0
15
30
45
60
75
I_D - Drain Current (A)
Transconductance
3000
C_iss
2400
1800
0.00
0
15
30
45
60
75
I_D - Drain Current (A)
On-Resistance vs. Drain Current
20
16
V_DS = 50 V
I_D = 40 A
12
1200
8
600
C_rss
C_oss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 66702
S10-1049-Rev. A, 03-May-10
4
0
0
10 20 30 40 50 60 70
Q_g - Total Gate Charge (nC)
Gate Charge
www.vishay.com
3