SUP40N10-30-GE3 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP40N10-30-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V_GS = 10 V
I_D = 15 A
1.5
1.0
10
T_J = 150 °C
T_J = 25 °C
0.5
0
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1000
100
10
I_AV (A) at T_A = 25 °C
1
I_AV (A) at T_A = 150 °C
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (s)
Avalanche Current vs. Time
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
125
I_D = 10 mA
120
115
110
105
100
95
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain-Source Breakdown Voltage
vs. Junction Temperature
www.vishay.com
4
Document Number: 66702
S10-1049-Rev. A, 03-May-10