SUP40N10-30-GE3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUP40N10-30-GE3
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
Zero Gate Voltage Drain Current
I_GSS
I_DSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 80 V, V_GS = 0 V
V_DS = 80 V, V_GS = 0 V, T_J = 125 °C
On-State Drain Current^a
I_D(on)
V_DS = 80 V, V_GS = 0 V, T_J = 150 °C
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 15 A
V_GS = 6 V, I_D = 10 A
V_GS = 10 V, I_D = 15 A, T_J = 125 °C
Forward Transconductance^a
Dynamic^b
V_GS = 10 V, I_D = 15 A, T_J = 150 °C
g_fs
V_DS = 15 V, I_D = 15 A
Input Capacitance
C_iss
Output Capacitance
C_oss
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
C_rss
Q_g
Q_gs
V_DS = 50 V, V_GS = 10 V, I_D = 40 A
Q_gd
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DD = 50 V, R_L = 1.25 Ω
I_D ≅ 40 A, V_GEN = 10 V, R_g = 2.5 Ω
Source-Drain Diode Ratings and Characteristics T_C = 25 °C^b
Continuous Current
I_S
Pulsed Current
Forward Voltage^a
I_SM
V_SD
I_F = 30 A, V_GS = 0 V
Reverse Recovery Time
t_rr
Peak Reverse Recovery Current
Reverse Recovery Charge
I_RM(REC)
Q_rr
I_F = 30 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
Typ.
Max.
Unit
100
V
2
4
± 100
nA
1
50
µA
150
75
A
0.024
0.030
0.026
0.034
Ω
0.054
0.060
10
S
2400
270
pF
90
35
60
11
nC
9
1.7
Ω
11
20
12
20
ns
30
45
12
20
40
A
75
1.0
1.5
V
60
100
ns
5
8
A
0.15
0.4
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66702
S10-1049-Rev. A, 03-May-10