SUM33N20-60P Datasheet, PDF (5/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 C MOSFET

THERMAL RATINGS
40
32
24
16
8
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Maximum Drain Curent vs.
Case Temperature
1
Duty Cycle = 0.5
SUM33N20-60P
Vishay Siliconix
100
*Limited by r_{DS (on)}
10
100 µs
1 ms
T_C = 25 °C
Single Pulse
1
10 ms
100 ms
DC
0.1
0.1
1
10
100
V_DS- Drain-to-Source Voltage (V)
*V_GS > minimum V_GS at which r_{DS (on)} is specified
Safe Operating Area
1000
0.2
0 .1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74291
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
www.vishay.com
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