SUM33N20-60P Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 C MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless noted
100
80
V_GS = 15, 12, 10, 8, 6 V
60
40
20
0
0
120
5V
3
6
9
12
15
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
100
T_C = - 55 °C
80
25 °C
60
125 °C
40
20
0
0
10
20
30
40
50
60
I_D - Drain Current (A)
Transconductance
0.19
0.16
I_D = 20 A
0.13
125 °C
0.10
0.07
25 °C
0.04
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
SUM33N20-60P
Vishay Siliconix
80
64
48
32
16
0
0
0.080
T_C = 125 °C
25 °C
- 55 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.070
0.060
0.050
VGS = 10 V
VGS = 15 V
0.040
0
3800
16
32
48
64
80
I _D - Drain Current (A)
On-Resistance vs. Drain Current
3040
C_iss
2280
1520
760
0
0
C_rss
C_oss
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
www.vishay.com
3