SUM33N20-60P Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 C MOSFET

New Product
SUM33N20-60P
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
200
0.059 at V_GS = 15 V
0.060 at V_GS = 10 V
I_D (A)
33
33
Q_g (Typ)
53
TO-263
G DS
Top View
Ordering Information: SUM33N20-60P-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFETS
• 150 °C Junction Temperature
• 100 % UIS and R_g Tested
APPLICATIONS
• Power Supply
• Lighting
• Industrial
D
G
S
N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 100 °C
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy^a
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
Symbol
R_thJA
R_thJC
Limit
Unit
200
V
± 25
33
20.8
A
80
20
20
mJ
156^b
W
3.12
- 55 to 175
°C
Limit
40
0.8
Unit
°C/W
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