SUM33N20-60P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 200-V (D-S) 175 C MOSFET

SUM33N20-60P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
15
V_DS = 50 V, 100 V, 150V
I_D = 50 A
12
9
6
3
0
0
100
16
32
48
64
80
Q_g - Total Gate Charge (nC)
Gate Charge
10
1
T_J =150 °C
0.1
T_J = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage
Source-Drain Diode Forward Voltage
250
240
I _D = 10 mA
230
220
210
200
190
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
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4
2.9
I_D = 20 A
2.4
1.9
1.4
V_GS = 10 V
V_GS = 15 V
0.9
0.4
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.7
0.2
- 0.3
- 0.8
- 1.3
I_D = 5 mA
I_D = 250 µA
- 1.8
- 2.3
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
150 °C
10
25 °C
1
0.00001
0.0001
0.001
0.01
0.1
t_av - (Sec)
Single Pulse Avalanche
Current Capability vs. Time
Document Number: 74291
S-62209-Rev. A, 30-Oct-06