SUM110N05-06L Datasheet, PDF (5/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET

THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
T_C − Ambient Temperature (_C)
SUM110N05-06L
Vishay Siliconix
1000
Safe Operating Area
*Limited by r_DS(on)
100
10 ms
100 ms
10
1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
dc
0.1
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10^−4
10^−3
10^−2
10^−1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72005.
Document Number: 72005
S-42140—Rev. B, 15-Nov-04
www.vishay.com
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