SUM110N05-06L Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET

SUM110N05-06L
Vishay Siliconix
N-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
55
r_DS(on) (W)
0.006 @ V_GS = 10 V
0.0085 @ V_GS = 4.5 V
I_D (A)
110
92
Q_g (Typ)
65
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive and Industrial
D
TO-263
G DS
Top View
Ordering Information: SUM110N05-06L
SUM110N05-06L—E3 (Lead (Pb)-Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C ^c
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
55
"20
110
63
240
60
180
158^b
3.7
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mount^c
Junction-to-Case
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
40
0.95
Unit
_C/W
Document Number: 72005
S-42140—Rev. B, 15-Nov-04
www.vishay.com
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