SUM110N05-06L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET

SUM110N05-06L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 30 A
2.0
1.5
1.0
0.5
0.0
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
100
10
I_AV (A) @ T_J = 25_C
1
I_AV (A) @ T_J = 150_C
0.1
0.00001 0.0001
0.001
0.01
0.1
1
t_in (Sec)
On-Resistance vs. Junction Temperature
70
I_D = 10 m A
65
60
55
50
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
www.vishay.com
4
Document Number: 72005
S-42140—Rev. B, 15-Nov-04