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SUM110N05-06L Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET
SUM110N05-06L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
200
VGS = 10 thru 5 V
200
Transfer Characteristics
150
100
50
0
0
200
160
120
80
40
4V
2, 3 V
2
4
6
8
10
VDS − Drain-to-Source Voltage (V)
Transconductance
TC = −55_C
25_C
125_C
150
100
TC = 125_C
50
25_C
−55_C
0
0
1
2
3
4
5
6
VGS − Gate-to-Source Voltage (V)
0.015
On-Resistance vs. Drain Current
0.012
0.009
0.006
0.003
VGS = 4.5 V
VGS = 10 V
0
0
5000
15
30
45
60
75
90
VGS − Gate-to-Source Voltage (V)
Capacitance
4000
Ciss
3000
0.000
0
20
20
40
60
80
100 120
ID − Drain Current (A)
Gate Charge
16
VGS = 30 V
ID = 110 A
12
2000
Crss
1000
Coss
0
0
11
22
33
44
55
VDS − Drain-to-Source Voltage (V)
Document Number: 72005
S-42140—Rev. B, 15-Nov-04
8
4
0
0
20
40
60
80
100 120
Qg − Total Gate Charge (nC)
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