SUM110N05-06L Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 55-V (D-S), 175C MOSFET

SUM110N05-06L
Vishay Siliconix
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 55 V, V_GS = 0 V
V_DS = 55 V, V_GS = 0 V, T_J = 125_C
V_DS = 55 V, V_GS = 0 V, T_J = 175_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 4.5 V, I_D = 20 A
V_GS = 10 V, I_D = 30 A, T_J = 125_C
V_GS = 10 V, I_D = 30 A, T_J = 175_C
V_DS = 15 V, I_D = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 110 A
V_DD = 30 V, R_L = 0.27 W
I_D ^ 110 A, V_GEN = 10 V, R_g = 2.5 W
Source-drain Diode Ratings and Characteristics (T_c = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_S
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = 110 A, V_GS = 0 V
I_F = 110 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
55
V
1
3
"100
nA
1
50
mA
250
120
A
0.0047
0.006
0.0066 0.0085
W
0.0102
0.0132
30
S
3300
625
pF
310
65
100
15
nC
16
15
25
15
25
ns
35
55
15
25
110
A
240
1.0
1.5
V
70
125
ns
2.5
5
A
0.09
0.31
mC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 72005
S-42140—Rev. B, 15-Nov-04