SUD80460E Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 150 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
28
10000
21
1000
14
100
7
0
10
0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
2nd line
Current Derating ^a
SUD80460E
Vishay Siliconix
200
I_D = 1 mA
190
Axis Title
180
170
10000
1000
100
100
10
25 °C
150 °C
160
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
1
0.000001 0.00001 0.0001 0.001
0.01
Time (s)
2nd line
I_DAV vs. Time
Note
a. The power dissipation P_D is based on T_J max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2150-Rev. A, 17-Oct-16
5
Document Number: 76248
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000