SUD80460E Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 150 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUD80460E
Vishay Siliconix
Axis Title
100
10000
10
1
0.1
0.01
T_J = 150 °C
T_J = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
Axis Title
0.2
10000
I_D = 8.3 A
0.15
1000
0.1
0.05
T_J = 150 °C
100
T_J = 25 °C
0
10
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
3.5
10000
3.2
I_D = 250 μA
2.9
1000
2.6
2.3
100
2.0
1.7
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
25
T_C = -55 °C
20
T_C = 25 °C
15
10000
1000
T_C = 125 °C
10
100
5
0
10
0
5
10
15
20
25
I_D - Drain Current (A)
2nd line
Transconductance
Axis Title
100
10000
I_DM limited
I_D limited
10
1
Limited by R_DS(on) ⁽¹⁾
0.1
100 μs
1000
1 ms
10 ms
DC, 10 s,
1 s, 100ms ₁₀₀
T_C = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
100
10
1000
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-2150-Rev. A, 17-Oct-16
4
Document Number: 76248
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000