SUD80460E Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 150 V (D-S) 175 °C MOSFET

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SUD80460E
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current ^a
Drain-source on-state resistance ^a
Forward transconductance ^a
Dynamic ^b
V_DS
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 μA
V_DS = V_GS , I_D = 250 μA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 150 V, V_GS = 0 V
V_DS = 150 V, V_GS = 0 V, T_J = 125 °C
V_DS = 150 V, V_GS = 0 V, T_J = 175 °C
V_DS  10 V, V_GS = 10 V
V_GS = 10 V, I_D = 8.3 A
V_DS = 15 V, I_D = 8.3 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_DS = 50 V, V_GS = 0 V, f = 1 MHz
V_DS = 75 V, V_GS = 10 V, I_D = 8.3 A
f = 1 MHz
V_DD = 75 V, R_L = 10.7 , I_D  7 A,
V_GEN = 10 V, R_g = 1 
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
Body diode peak reverse recovery charge
I_SM
V_SD
t_rr
Q_rr
t_a
t_b
I_RM(REC)
I_F = 7 A, V_GS = 0 V
I_F = 7 A, di/dt = 100 A/μs
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
150
-
-
V
2
-
4
V
-
-
250
nA
-
-
1
μA
-
-
150
-
-
5
mA
30
-
-
A
-
0.0372 0.0447 
-
11
-
S
-
560
-
-
148
-
pF
-
8
-
-
10.5
16
-
2.7
-
nC
-
3.1
-
1.44
7.2
14.4

-
8
16
-
20
30
ns
-
15
25
-
30
50
-
-
42
A
-
0.85
1.5
V
-
68
102
ns
-
0.21
0.32
μC
-
56
-
ns
-
12
-
-
5.5
10
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2150-Rev. A, 17-Oct-16
2
Document Number: 76248
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000