SUD80460E Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 150 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUD80460E
Vishay Siliconix
30
25
20
15
10
5
0
0
Axis Title
V_GS = 10 V thru 8 V
V_GS = 7 V
10000
V_GS = 6 V
1000
100
V_GS = 5 V
V_GS = 4 V
0.5
1
1.5
V_DS - Drain-to-Source Voltage (V)
2nd line
10
2
Output Characteristics
60
45
30
15
0
0
Axis Title
T_C = 125 °C
10000
1000
100
T_C = 25 °C
T_C = -55 °C
2
4
6
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
8
Axis Title
0.06
10000
0.05
0.04
0.03
V_GS = 10 V
1000
100
0.02
0
5
10 15 20 25
I_D - Drain Current (A)
2nd line
10
30
On-Resistance vs. Drain Current and Gate Voltage
1500
Axis Title
10000
1200
900
1000
600
C_iss
100
300
C_rss
C_oss
0
10
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
I_D = 8.3 A
8
Axis Title
V_DS = 75 V
6
V_DS = 35 V
4
V_DS = 120 V
2
0
0
3
6
9
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
12
Axis Title
2.3
V_GS = 10 V, I_D = 8.3 A
2.0
10000
1.7
1000
1.4
1.1
100
0.8
0.5
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-2150-Rev. A, 17-Oct-16
3
Document Number: 76248
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000