SUD80460E Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 150 V (D-S) 175 °C MOSFET

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SUD80460E
Vishay Siliconix
N-Channel 150 V (D-S) 175 °C MOSFET
TO-252
Drain connected to tab
S
D
G
Top View
PRODUCT SUMMARY
V_DS (V)
R_DS(on) max. () at V_GS = 10 V
Q_g typ. (nC)
I_D (A)
Configuration
150
0.0447
10.5
42 ^d
Single
FEATURES
• ThunderFET^® power MOSFET
• Maximum 175 °C junction temperature
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Boost converter
• LED backlighting
• Synchronous rectification
• Power supplies
• DC/AC inverter
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
TO-252
SUD80460E-GE3
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
V_DS
Gate-source voltage
Continuous drain current
V_GS
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current ^a
Single pulse avalanche energy ^a
Maximum power dissipation
I_DM
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
T_C = 125 °C
P_D
Operating junction and storage temperature range
Soldering recommendations (peak temperature) ^c
T_J, T_stg
LIMIT
150
± 20
42 ^d
18.1
40
42 ^d
25
31.25
65.2 ^b
21.7 ^b
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient (PCB mount) ^c
Maximum junction-to-case (drain)
Steady state
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
R_thJA
R_thJC
MAXIMUM
50
2.3
UNIT
°C/W
S16-2150-Rev. A, 17-Oct-16
1
Document Number: 76248
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000