SUD50N06-09L-E3 Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level

THERMAL RATINGS
60
50
40
30
20
10
SUD50N06-09L
Vishay Siliconix
1000
100
Limited by
R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms
DC
0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (°C)
Maximum Drain Current vs. Ambient Temperature
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72004.
Document Number: 72004
For technical questions, contact: [e-mail]
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000