SUD50N06-09L-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level

SUD50N06-09L
Vishay Siliconix
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
PRODUCT SUMMARY
V_DS (V)
60
R_DS(on) ()
0.0093 at V_GS = 10 V
0.0122 at V_GS = 4.5 V
TO-252
I_D (A)^a
50
50
FEATURES
• 175 °C Junction Temperature
• TrenchFET^® Power MOSFET
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD50N06-09L-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V_GS
± 20
V
Continuous Drain Current (T_J = 175 °C)^b
T_C = 25 °C
T_C = 100 °C
I_D
50
50^a
Pulsed Drain Current
I_DM
100
A
Continuous Source Current (Diode Conduction)
I_S
50^a
Avalanche Current
I_AS
50
Single Avalanche Energy (Duty Cycle  1 %)
L = 0.1 mH
E_AS
125
mJ
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
136
3^b, 8.3^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t  10 s.
t  10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
Document Number: 72004
For technical questions, contact: [e-mail]
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000