SUD50N06-09L-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level

TYPICAL CHARACTERISTICS (25 °C unless noted)
100
V_GS = 10 thru 5 V
80
4V
60
40
20
2 V, 3 V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
120
T_C = - 55 °C
100
25 °C
80
125 °C
60
40
20
0
0
10
20
30
40
50
I_D - Drain Current (A)
Transconductance
4000
3500
3000
C_iss
2500
2000
1500
1000
C_oss
500
C_rss
0
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
SUD50N06-09L
Vishay Siliconix
100
80
60
40
T_C = 125 °C
20
25 °C
- 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.015
0.012
0.009
V_GS = 4.5 V
0.006
V_GS = 10 V
0.003
0.000
0
10
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
V_DS = 30 V
I_D = 50 A
6
4
2
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 72004
For technical questions, contact: [e-mail]
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000