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SUD50N06-09L-E3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
SUD50N06-09L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VDS = 60 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 10 V, ID = 20 A, TJ = 175 °C
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 50 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.6 
ID  50 A, VGEN = 10 V, Rg = 2.5 
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltage
VSD
IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/µs
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Min.
Typ.a
Max.
Unit
60
V
1
2
3
± 100
nA
1
50
µA
250
50
A
0.0074 0.0093
0.0160

0.0200
0.0122
60
S
2650
470
pF
225
47
70
10
nC
12
10
20
15
25
ns
35
50
20
30
100
A
1
1.5
V
45
100
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72004
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000