SUD50N06-09L-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level

SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
2.5
V_GS = 10 V
I_D = 20 A
2.0
1.5
1.0
0.5
0.0
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
T_J = 150 °C
T_J = 25 °C
10
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72004
For technical questions, contact: [e-mail]
www.vishay.com
S13-0298-Rev. F, 11-Feb-13
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000