SIA950DJ Datasheet, PDF (5/7 Pages) Vishay Siliconix – Dual N-Channel 190-V (D-S) MOSFET

New Product
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
Limited by R_DS(on)*
1
100 µs
0.1
1 ms
10 ms
0.01
T_A = 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.001
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
1.2
8
SiA950DJ
Vishay Siliconix
0.9
6
0.6
4
0.3
2
0.0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
www.vishay.com
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