SIA950DJ Datasheet, PDF (2/7 Pages) Vishay Siliconix – Dual N-Channel 190-V (D-S) MOSFET

SiA950DJ
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
R_thJA
R_thJC
Typical
52
12.5
Maximum
65
16
Unit
°C/W
Notes:
a. T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Q_g
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 16 V
V_DS = 190 V, V_GS = 0 V
V_DS = 190 V, V_GS = 0 V, T_J = 85 °C
V_DS ≥ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 0.36 A
V_GS = 2.5 V, I_D = 0.35 A
V_GS = 1.8 V, I_D = 0.15 A
V_DS = 15 V, I_D = 0.36 A
V_DS = 100 V, V_GS = 0 V, f = 1 MHz
V_DS = 95 V, V_GS = 10 V, I_D = 0.47 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
I_S
I_SM
V_SD
V_DS = 95 V, V_GS = 4.5 V, I_D = 0.47 A
f = 1 MHz
V_DD = 95 V, R_L = 250 Ω
I_D ≅ 0.38 A, V_GEN = 4.5 V, R_g = 1 Ω
V_DD = 95 V, R_L = 250 Ω
I_D ≅ 0.38 A, V_GEN = 10 V, R_g = 1 Ω
T_C = 25 °C
I_S = 0.5 A, V_GS = 0 V
Min.
190
0.6
1
Typ.
200
- 3.0
3.0
3.2
3.5
2
90
5
3
3
1.4
0.25
0.40
2.3
10
15
25
15
3
12
10
10
0.8
Max.
Unit
1.4
± 100
1
10
3.8
4.2
17.0
V
mV/°C
V
nA
µA
A
Ω
S
pF
4.5
2.1
nC
Ω
15
25
40
25
ns
10
20
15
15
0.95
A
1
1.2
V
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Document Number: 64712
S09-0142-Rev. A, 02-Feb-09