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| SIA950DJ Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 190-V (D-S) MOSFET | |||
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New Product
SiA950DJ
Vishay Siliconix
Dual N-Channel 190-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
190
RDS(on) (Ω)
3.8 at VGS = 4.5 V
4.2 at VGS = 2.5 V
17 at VGS = 1.8 V
ID (A)a
0.95
0.9
0.3
Qg (Typ.)
1.4 nC
PowerPAK SC-70-6 Dual
FEATURES
⢠Halogen-free According to IEC 61249-2-21
⢠LITTLE FOOT® Power MOSFET
⢠New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
APPLICATIONS
⢠DC/DC Converter for Portable Devices
⢠Load Switch for Portable Devices
1
S1
D1
D1
6
G2
5
2.05 mm S2
4
2
G1
D2
3
D2
2.05 mm
Marking Code
Part # code
CEX
XXX
Lot Traceability
and Date code
D1
D2
G1
G2
S1
S2
Ordering Information: SiA950DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
190
VGS
± 16
V
TC = 25 °C
0.95
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
0.76
0.47b, c
TA = 70 °C
0.38b, c
A
Pulsed Drain Current
IDM
1
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
0.95
0.47b, c
TC = 25 °C
7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
5
1.9b, c
W
TA = 70 °C
1.2b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
www.vishay.com
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