SIA950DJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – Dual N-Channel 190-V (D-S) MOSFET

SiA950DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
10
2.4
I_D = 0.47 A
V_DS = 95 V
8
2.0
6
1.6
V_DS = 152 V
V_GS = 4.5 V; 2.5 V; I_D = 0.36 A
4
1.2
V_GS = 1.8 V; I_D = 0.15 A
2
0.8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q_g - Total Gate Charge (nC)
Gate Charge
1
T_J = 150 °C
0.1
T_J = 25 °C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
1.2
1.1
I_D = 250 µA
1.0
0.9
0.8
0.7
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
8
I_D = 0.36 A
7
6
T_J = 125 °C
5
4
T_J = 25 °C
3
2
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
www.vishay.com
4
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09