SIA950DJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual N-Channel 190-V (D-S) MOSFET

New Product
SiA950DJ
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
I_F = 0.5 A, dI/dt = 100 A/µs, T_J = 25 °C
45
70
ns
45
70
nC
21
ns
24
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
1.0
0.9
V_GS = 5 thru 2 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V_GS = 1 V
0.0
0 1 2 3 4 5 6 7 8 9 10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0.4
T_C = - 55 °C
0.3
0.2
T_C = 25 °C
0.1
T_C = 125 °C
0.0
0.0
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6
150
5
V_GS = 1.8 V
4
V_GS = 2.5 V
3
V_GS = 4.5 V
2
0.0
0.2
0.4
0.6
0.8
1.0
I_D - Drain Current (A)
On-Resistance vs. Drain Current
120
C_iss
90
60
30
C_oss
0 ^Crss
0
10
20
30
40
50
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 64712
S09-0142-Rev. A, 02-Feb-09
www.vishay.com
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