SIA918EDJ Datasheet, PDF (5/9 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA918EDJ
Vishay Siliconix
Axis Title
100
Limited by R_DS(on) ⁽¹⁾
I_DM limited
10000
10
1000
100 μs
1
1 ms
0.1
T_A = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
10 ms ₁₀₀
100 ms
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
Axis Title
10
10000
8
8
6
Package limited
4
2
6
1000
4
100
2
0
10
0
25 50 75 100 125 150
T_C - Case Temperature (°C)
2nd line
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating ^a
Power Derating
Note
a. The power dissipation P_D is based on T_J (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-1004-Rev. A, 30-May-16
5
Document Number: 79034
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000