SIA918EDJ Datasheet, PDF (2/9 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

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SiA918EDJ
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
Forward Transconductance^a
Dynamic ^b
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 μA
I_D = 250 μA
V_DS = V_GS, I_D = 250 μA
V_DS = 0 V, V_GS = ± 4.5 V
V_DS = 0 V, V_GS = ± 8 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS  5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 3 A
V_GS = 2.5 V, I_D = 3 A
V_GS = 1.8 V, I_D = 1 A
V_DS = 15 V, I_D = 3 A
Total Gate Charge
Q_g
V_DS = 15 V, V_GS = 8 V, I_D = 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 10 A
f = 1 MHz
V_DD = 15 V, R_L = 5 
I_D  3 A, V_GEN = 4.5 V, R_g = 1 
V_DD = 15 V, R_L = 5 
I_D  3 A, V_GEN = 8 V, R_g = 1 
T_C = 25 °C
I_S = 3 A, V_GS = 0 V
I_F = 3 A, dI/dt = 100 A/μs,
T_J = 25 °C
MIN. TYP. MAX.
30
-
-
-
28
-
-
-2.4
-
0.4
-
0.9
-
-
± 0.5
-
-
±5
-
-
1
-
-
10
10
-
-
-
0.046 0.058
-
0.050 0.065
-
0.055 0.077
-
14
-
-
6.2
9.5
-
3.6
5.5
-
0.45
-
-
0.53
-
0.9
4.3
8.6
-
5
10
-
30
60
-
30
60
-
41
80
-
2
5
-
23
50
-
11
20
-
26
50
-
-
4.5
-
-
15
-
0.84
1.2
-
11
20
-
4.4
10
-
8
-
-
3
-
UNIT
V
mV/°C
V
μA
A

S
nC

ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1004-Rev. A, 30-May-16
2
Document Number: 79034
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000