SIA918EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA918EDJ
Vishay Siliconix
8
I_D = 10 A
6
Axis Title
V_DS = 15 V
4
V_DS = 7.5 V
2
V_DS = 24 V
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
6
1.8
I_D = 3 A
1.6
Axis Title
V_GS = 4.5 V; 2.5 V
10000
1.4
1000
V_GS = 1.8 V
1.2
1.0
100
0.8
0.6
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Axis Title
100
10000
T_J = 150 °C
10
1000
T_J = 25 °C
1
100
0.1
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.12
0.09
0.06
0.03
Axis Title
I_D = 7 A
10000
T_J = 125 °C
1000
100
T_J = 25 °C
0
10
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.8
10000
0.7
0.6
1000
0.5
0.4
100
I_D = 250 μA
0.3
0.2
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
20
15
10
5
0
0.001 0.01
0.1 1
10
Pulse (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
S16-1004-Rev. A, 30-May-16
4
Document Number: 79034
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000