SIA918EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 30 V (D-S) MOSFET

www.vishay.com
SiA918EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
15.0
10000
12.0
9.0
6.0
3.0
T_J = 25 °C
1000
100
0
10
0 2 4 6 8 10 12 14 16
V_GS - Gate-to-Source Voltage (V)
2nd line
Gate Current vs. Gate-Source Voltage
Axis Title
10^-2
10000
10^-3
10^-4
10^-5
T_J = 150 °C
1000
10^-6
10^-7
10^-8
10^-9
T_J = 25 °C
100
10^-10
0
3
6
9
12
V_GS - Gate-to-Source Voltage (V)
2nd line
10
15
Gate Current vs. Gate-Source Voltage
Axis Title
15
10000
V_GS = 5 V thru 2 V
12
1000
9
6
V_GS = 1.5 V
100
3
V_GS = 1 V
0
10
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
15
10000
12
1000
9
6
T_C = 25 °C
100
3
T_C = 125 °C
T_C = -55 °C
0
10
0
0.5
1
1.5
2
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
0.12
Axis Title
10000
0.09
0.06
0.03
V_GS = 1.8 V
V_GS = 2.5 V
1000
V_GS = 4.5 V
100
0
10
0
3
6
9
12
15
I_D - Drain Current (A)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Axis Title
500
10000
400
C_iss
300
1000
200
100
0
0
C_oss
C_rss
5
10 15 20 25
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
30
S16-1004-Rev. A, 30-May-16
3
Document Number: 79034
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000