SI8902EDB_08 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

PACKAGE OUTLINE
MICRO FOOT: 6 BUMP (2 x 3, 0.8 mm PITCH)
6 x 0.30 0.31
Note 3
Solder Mask - 0.4
e
e
e
Recommended Land
Si8902EDB
Vishay Siliconix
Note 2
A₂
A
A₁
b Diameter
Bump Note 1
8902E
XXX
Mark on Backside of Die
Notes (Unless Otherwise Specified):
1. 6 solder bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ag/Ni/Ti layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
Dim.
A
A₁
A₂
b
D
E
e
s
Min.
0.600
0.260
0.33
0.370
1.520
2.320
0.750
0.380
Notes:
a. Use millimeters as the primary measurement.
Millimeters^a
Max.
0.650
0.290
0.360
0.410
1.600
2.400
0.850
0.400
s
e
e
E
eD
s
Min.
0.0236
0.102
0.0134
0.0146
0.0598
0.0913
0.0295
0.0150
Inches
Max.
0.0256
0.114
0.0142
0.0161
0.0630
0.0945
0.0335
0.0157
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71862.
Document Number: 71862
S-83049-Rev. I, 22-Dec-08
www.vishay.com
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