SI8902EDB_08 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
V_GS = 5 thru 1.5 V
8
8
Si8902EDB
Vishay Siliconix
6
6
4
2
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
V_GS = 1.8 V
0.04
0.02
V_GS = 3.7 V
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0.10
0.08
0.06
I_S1S2 = 1 A
I_S1S2 = 5 A
0.04
0.02
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
4
T_C = 125 °C
2
25 °C
- 55 °C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.6
V_GS = 4.5 V
I_S1S2 = 1 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.2
0.1
I_S1S2 = 980 µA
0.0
- 0.1
- 0.2
- 0.3
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
Document Number: 71862
S-83049-Rev. I, 22-Dec-08
www.vishay.com
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