SI8902EDB_08 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

Si8902EDB
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Source Current
On-State Source Current^a
V_GS(th)
I_GSS
I_S1S2
I_S(on)
Source1-Source2 On State Resistance^{a R}S1S2(on)
Forward Transconductance^a
g_fs
Dynamic^b
V_SS = V_GS, I_D = 980 µA
V_SS = 0 V, V_GS = ± 4.5 V
V_SS = 0 V, V_GS = ± 12 V
V_SS = 20 V, V_GS = 0 V
V_SS = 20 V, V_GS = 0 V, T_J = 85 °C
V_SS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_SS = 1 A
V_GS = 3.7 V, I_SS = 1 A
V_GS = 2.5 V, I_SS = 1 A
V_GS = 1.8 V, I_SS = 1 A
V_SS = 10 V, I_SS = 1 A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_SS = 10 V, R_L = 10 Ω
I_SS ≅ 1 A, V_GEN = 4.5 V, R_g = 6 Ω
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
0.45
1.0
V
±4
µA
± 10
mA
1
µA
5
5
A
0.038 0.045
0.041 0.048
Ω
0.048 0.057
0.060 0.072
20
S
1
1.5
3
4.5
µs
17
26
10
15
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
I_GSS at 25 °C (mA)
16
12
8
4
10 000
1000
100
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
0.01
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
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2
Document Number: 71862
S-83049-Rev. I, 22-Dec-08