SI8902EDB_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET

Si8902EDB
Vishay Siliconix
Bi-Directional N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_S1S2 (V)
20
R_S1S2(on) (Ω)
0.045 at V_GS = 4.5 V
0.048 at V_GS = 3.7 V
0.057 at V_GS = 2.5 V
0.072 at V_GS = 1.8 V
I_S1S2 (A)
5.0
4.8
4.4
3.9
MICRO FOOT
Bump Side View
Backside View
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET^® Power MOSFET
• Ultra-Low R_SS(on)
• ESD Protected: 4000 V
• MICRO FOOT^® Chipscale Packaging
Reduces Footprint Area Profile (0.62 mm) and
On-Resistance Per Footprint Area
APPLICATIONS
• Battery Protection Circuit
- 1-2 Cell Li+/LiP Battery Pack for Portable Devices
S₁
S₂ 5 4 S₂
Pin 1 Identifier
G₁
4 kΩ
G₂ 6 3 G₁
Device Marking:
8902E = P/N Code
xxx = Date/Lot Traceability Code
4 kΩ
G₂
S₁ 1 2 S₁
Ordering Information:
Si8902EDB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel
S₂
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Source1- Source2 Voltage
Gate-Source Voltage
V_S1S2
20
V
V_GS
± 12
Continuous Source1- Source2 Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_S1S2
5.0
3.4
3.9
2.8
A
Pulsed Source1- Source2 Current
I_SM
40
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
1.7
1
0.8
0.5
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Package Reflow Conditions^c
IR/Convection
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot^b
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. The foot is defined as the top surface of the package.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
Document Number: 71862
S-83049-Rev. I, 22-Dec-08
Symbol
R_thJA
R_thJF
Typical
60
95
18
Maximum
75
120
22
Unit
°C/W
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