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SI8902EDB_08 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET
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Si8902EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
30
25
Limited by RDS(on) *
10
20
IDM Limited
0.0001 s
0.001 s
15
10
5
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
1
ID(on)
Limited
0.1
TA = 25 °C
Single Pulse
0.01 s
0.1 s
1s
10 s
DC
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. PER UNIT BASE = RTHJA = 95 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
www.vishay.com
4
Document Number: 71862
S-83049-Rev. I, 22-Dec-08
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