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SI8900EDB Datasheet, PDF (5/5 Pages) Vishay Siliconix – Bi-Directional N-Channel 20-V (D-S) MOSFET | |||
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New Product
PACKAGE OUTLINE
MICRO FOOT: 10âBUMP (2 X 5, 0.8âmm PITCH)
10 O 0.30 X 0.31
Note 3
Solder Mask O X 0.40
A2
A
e
A1
e
Recommended Land
8900E
xxx
b Diamerter
E
Si8900EDB
Vishay Siliconix
Silicon
Bump Note 2
S2
e
Mark on Backside of Die
S1
e
D
NOTES (Unless Otherwise Specified):
1. Laser mark on the silicon die back, coated with a thin metal.
2. Bumps are Eutectic solder 63/57 Sn/Pb.
3. Non-solder mask defined copper landing pad.
MILLIMETERS*
INCHES
Dim
Min
Max
Min
Max
A
0.600
A1
0.260
A2
0.340
b
0.370
D
4.050
E
1.980
e
0.750
S1
0.430
S2
0.580
0.650
0.290
0.360
0.410
4.060
2.000
0.850
0.450
0.600
0.0236
0.102
0.0134
0.0146
0.1594
0.0780
0.0295
0.0169
0.0228
0.0256
0.0114
0.0142
0.0161
0.1598
0.0787
0.0335
0.0177
0.0236
* Use millimeters as the primary measurement.
Document Number: 71830
S-21474âRev. D, 26-Aug-02
www.vishay.com
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